Title :
Hybrid Boltzmann transport-Schrodinger equation model for quantum well injection transit (QWITT) diodes
Author :
Gullapalli, K.K. ; Miller, D.R. ; Neikirk, D.P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
The authors report a self-consistent study of steady-state nonstationary transport in QWITT diodes using the pure state tunneling theory to treat transport through the double barrier quantum well region and the Boltzmann transport equation (BTE) to treat transport in the rest of the device. The distribution functions at the boundaries of the double barrier structure are evaluated, taking into account both tunneling and phonon scattering processes. It si found that velocity overshoot occurs in a region of 50 nm within the double barrier region, with a peak velocity of about 8*10/sup 7/ cm/sec occurring immediately after injection. The velocity falls rapidly to 7-8*10/sup 6/ cm/sec over a distance of 50 nm. Due to the high energy of carriers injected from the quantum well and the presence of high electric fields, the extent of the velocity overshoot in the drift region of QWITT diodes is limited.<>
Keywords :
Boltzmann equation; Schrodinger equation; high field effects; semiconductor device models; semiconductor diodes; solid-state microwave devices; transit time devices; tunnelling; Boltzmann transport equation; Boltzmann transport-Schrodinger equation; QWITT diodes; double barrier structure; drift region; high electric fields; hybrid model; phonon scattering; pure state tunneling theory; quantum well injection transit; steady-state nonstationary transport; velocity overshoot; Boltzmann equation; Electron devices; Frequency; Microelectronics; Microwave devices; Quantum computing; Quantum mechanics; Resonant tunneling devices; Semiconductor diodes; Steady-state;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235344
