Very lightly nitrided oxide gate MOSFETs for deep-sub-micron CMOS devices

Author

Momose, H.S. ; Morimoto, T. ; Ozawa, Y. ; Tsuchiaki, M. ; Ono, M. ; Yamabe, K. ; Iwai, H.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1991

fDate

8-11 Dec. 1991

Firstpage

359

Lastpage

362

Abstract

The characteristics and reliability of the nitrided oxide gate n- and p-MOSFETs with less than 1 atom% nitrogen concentration gate films were investigated in detail. These very light nitridations were accomplished using NH/sub 3/ gas at low temperatures from 800 degrees C to 900 degrees C. The low nitrogen concentrations, such as 0.13 atom% were obtained by SIMS and AES (Auger electron spectroscopy) measurements. The optimum nitrogen concentration region for the deep-sub-micron device is discussed. It was shown that, with the 0.5 atom% nitrogen concentration, good drivability and good hot carrier reliability were attained at the same time, and they were equivalent to those of the oxynitride gate MOSFETs using N/sub 2/O gas. The suppression of boron penetration is also discussed.<>

Keywords

CMOS integrated circuits; insulated gate field effect transistors; nitridation; rapid thermal processing; 800 to 900 C; AES; Auger electron spectroscopy; B penetration suppression; NH/sub 3/ gas; RTN; SIMS; SiN/sub x/-SiO/sub 2/; characteristics; deep submicron CMOS; deep-sub-micron CMOS devices; drivability; hot carrier reliability; light nitridations; lightly nitrided oxide gate MOSFETs; low N concentration; nitrided oxide gate; optimum N concentration; oxynitride gate MOSFETs; reliability; temperatures; Atomic measurements; Furnaces; Hydrogen; Insulation; Interface states; MOSFET circuits; Nitrogen; Oxidation; Temperature; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0243-5

Type

conf

DOI

10.1109/IEDM.1991.235379

Filename

235379