• DocumentCode
    3304487
  • Title

    Charge carrier mobility in Bi2Te/sub 3-x/Sex(x<0.4) solid solution with excess of Te

  • Author

    Kutasov, V.A. ; Konstantinov, P.P.

  • Author_Institution
    A.F. Ioffe Phys.-Tech. Inst., Acad. of Sci., Moscow, Russia
  • fYear
    1996
  • fDate
    26-29 March 1996
  • Firstpage
    42
  • Lastpage
    45
  • Abstract
    Thermoelectric and galvanomagnetic properties of n-Bi/sub 2/Te/sub 3-x/Se/sub x/ (x<0.4) solid solutions with the carrier density /spl les/1.10/sup 18/ cm/sup -3/ are studied. Some peculiarities of the mobility temperature dependence with account of the effective scattering parameter r/sub ef/ are discussed.
  • Keywords
    bismuth compounds; carrier density; carrier mobility; galvanomagnetic effects; semiconductor materials; solid solutions; thermoelectricity; Bi/sub 2/Te/sub 3-x/Se/sub x/ solid solution; Bi/sub 2/Te/sub 3/Se; carrier density; carrier mobility; effective scattering parameter; galvanomagnetic properties; temperature dependence; thermoelectric properties; Acoustic scattering; Bismuth; Charge carrier density; Charge carrier mobility; Crystallization; Optical scattering; Solids; Tellurium; Temperature dependence; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 1996., Fifteenth International Conference on
  • Conference_Location
    Pasadena, CA, USA
  • Print_ISBN
    0-7803-3221-0
  • Type

    conf

  • DOI
    10.1109/ICT.1996.553253
  • Filename
    553253
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3304487