Title :
Hot-carrier light emission in SOI MOSFET simulated with coupled Monte Carlo and energy transport analysis
Author :
Koyanagi, M. ; Kurino, H. ; Kiba, H. ; Mori, H. ; Hashimoto, T. ; Hiruma, Y. ; Fujimori, T. ; Yamaguchi, Yoshio ; Nishimura, T.
Author_Institution :
Hiroshima Univ., Japan
Abstract :
The hot carrier light emission in SOI (silicon-on-insulation)-MOSFETs is analyzed by using a recently developed two-dimensional device simulator. A novel calculation algorithm of coupled Monte Carlo-energy transport analysis is used to obtain the spatial carrier temperature distribution and the carrier energy distribution at a fast computation turn-around time. The relations between the hot carrier effects and the photon emission properties are easily evaluated by using this simulator. The simulation results show excellent agreement with experimental results. It was found from the comparisons between the simulated results and the experimental ones that the hot carrier energy distribution cannot be described by the Maxwell-Boltzmann distribution in the higher energy part.<>
Keywords :
Monte Carlo methods; digital simulation; electroluminescence; elemental semiconductors; hot carriers; insulated gate field effect transistors; semiconductor device models; silicon; Maxwell-Boltzmann distribution; SOI MOSFET; Si; calculation algorithm; carrier energy distribution; coupled Monte Carlo-energy transport analysis; hot carrier light emission; photon emission properties; spatial carrier temperature distribution; two-dimensional device simulator; Acoustic scattering; Distribution functions; Electron emission; Hot carriers; Light scattering; MOSFET circuits; Monte Carlo methods; Optical coupling; Optical scattering; Temperature distribution;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235427
