Title :
1 GHz integrated poly-Si and -SiGe photoconductors with BiCMOS compatibility
Author :
Hai, A. ; Morse, J.D. ; Dutton, R.W.
Author_Institution :
Stanford Univ., CA, USA
Abstract :
Polycrystalline silicon and silicon-germanium photoconductors, which can be fully integrated in a standard BiCMOS process, were fabricated and tested. The response time of these devices makes them suitable for clocking/sampling applications in excess of 1 GHz. In addition, the effects of small variations in key fabrication steps were studied. This work indicates that photoconductors can be designed and fabricated according to specifications that are compatible with a standard CMOS process flow. Using the PCEs (photoconducting circuit elements) considered here, sampling devices can be created that allow sub-200 ps resolution of on-chip signals. Both the Si and SiGe PCEs offer new opportunities to realize new functional capabilities using optical signals coupled with standard silicon IC technology.<>
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; elemental semiconductors; photoconducting devices; semiconductor materials; silicon; 1 GHz; BiCMOS compatibility; clocking applications; photoconductors; polycrystalline Si; polycrystalline SiGe; polysilicon; sampling applications; standard CMOS process flow; BiCMOS integrated circuits; CMOS process; Clocks; Delay; Fabrication; Germanium silicon alloys; Photoconductivity; Sampling methods; Silicon germanium; Testing;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235428
