Title :
Ultra-low-noise fully ion-implanted GaAs-MESFET with Au/WSiN refractory metal gate
Author :
Onodera, Kiyomitsu ; Nishimura, Kazumi ; Sugitani, Suehiro ; Asai, Kazuyoshi
Author_Institution :
NTT LSI Lab., Kanagawa, Japan
Abstract :
A fully ion-implanted n/sup +/ self-aligned GaAs-MESFET with Au/WSiN refractory gate is developed. The MESFETs with 0.35- mu m gate length demonstrate a maximum cutoff frequency of 76 GHz and even under the low-noise condition realize a cutoff frequency over 60 GHz. A minimum noise figure of 0.81 dB with an associated gain of 7.7 dB has been obtained at 18 GHz. The K/sub f/ factor was estimated to be 1.4, according to the Fukui noise figure equation and the fitted equivalent circuit. This is the lowest noise figure ever reported for a GaAs-MESFET, and is comparable to those for AlGaAs/GaAs HEMTs (high electron mobility transistors) of the same geometry.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; semiconductor device noise; solid-state microwave devices; 0.35 micron; 0.81 dB; 18 to 76 GHz; 7.7 dB; Au-WSiN-GaAs; Fukui noise figure equation; GaAs-MESFET; T-gate; equivalent circuit; gain; gate length; ion-implanted; low noise MESFETs; maximum cutoff frequency; minimum noise figure; refractory gate; refractory metal gate; self-aligned; semiconductors; Cutoff frequency; Equations; Equivalent circuits; Gain; Gallium arsenide; Gold; HEMTs; MESFETs; MODFETs; Noise figure;
Conference_Titel :
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0243-5
DOI :
10.1109/IEDM.1991.235455
