Analytical Modeling of Flicker Noise in Halo Implanted MOSFETs

Author

Agarwal, Harshit ; Khandelwal, Sourabh ; Dey, Sagnik ; Chenming Hu ; Chauhan, Yogesh Singh

Author_Institution

Dept. of Electr. EngineeringNanolab, Indian Inst. of Technol. Kanpur, Kanpur, India

Volume

3

Issue

4

fYear

2015

fDate

Jul-15

Firstpage

355

Lastpage

360

Abstract

An improved analytical model for flicker noise (1/f noise) in MOSFETs is presented. Current models do not capture the effect of high-trap density in the halo regions of the devices, which leads to significantly different bias dependence of flicker noise across device geometry. The proposed model is the first compact model implementation capturing such effect and show distinct improvements over other existing noise models. The model is compatible with BSIM6, the latest industry standard model for bulk MOSFET, and is validated with measurements from 45-nm low-power CMOS technology node.

Keywords

1/f noise; CMOS integrated circuits; MOSFET; flicker noise; 1/f noise; BSIM6; CMOS technology node; analytical modeling; bias dependence; bulk MOSFET; complementary metal oxide semiconductor; current model; flicker noise; halo implanted MOSFET; high-trap density; industry standard model; metal oxide semiconductor field effect transistor; size 45 nm; 1f noise; Integrated circuit modeling; MOSFET; Semiconductor device modeling; Semiconductor process modeling; BSIM6; Compact Model; Flicker Noise; Halo Doping; compact model; flicker noise; halo doping;

fLanguage

English

Journal_Title

Electron Devices Society, IEEE Journal of the

Publisher

ieee

ISSN

2168-6734

Type

jour

DOI

10.1109/JEDS.2015.2424686

Filename

7089170