Evaluation of impact ionization modeling in the framework of hydrodynamic equations

Using consistent Monte Carlo (MC) and hydrodynamic (HD) MOS device models the validity of the three impact ionization modeling approaches which are most frequently used in the framework of hydrodynamic equation is examined with the MC model as physical reference. Good agreement with the MC reference for substrate currents as well as spatial impact ionization distributions is observed for the HD model in combination with an improved version of the nonlocal field line based lucky electron model reported by B. Meinerzhagen (1988). The agreement of impact ionization distributions is poor if the HD model is combined with either a local field or local carrier temperature model. But substrate current results are still satisfactory for the carrier temperature model of R.K. Mains et al. (1983).<>