Plasma-Induced Deactivation Of P, B, Sb By Low-Energy (<30 eV) Ion Bombardment During Low-Temperature Silicon Epitaxy

Author

Kumami, H. ; Shindo, W. ; Kakuta, J. ; Ohmi, T.

Author_Institution

Tohoku University

fYear

1998

fDate

13-16 July 1998

Firstpage

Lastpage

Keywords

Amorphous materials; Argon; Boron; Conductivity; Crystallization; Plasma temperature; Semiconductor films; Silicon; Sputtering; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 1998 International

Conference_Location

Kyoungju, South Korea

Print_ISBN

4-930813-83-2

Type

DOI

10.1109/IMNC.1998.729932

Filename

729932

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