Measurement of interface states distribution at the gates of InP FETs

Author

Lee, W. ; Tabatabaei, S.A. ; Iliadis, A.A.

Author_Institution

Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

661

Lastpage

665

Abstract

An improved frequency dispersive transconductance technique has been developed to measure the density and frequency distribution of interface states at the gates and source-drain access regions of MESFETs. The technique has been developed to be applicable to both MESFETs and MISFETs. The application of this technique to study the state of interface of enhanced barrier height gate n-channel InP MESFETs and plasma enhanced chemical vapor deposition (PECVD) SiO/sub 2/ insulated gate MISFETs is reported.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; indium compounds; insulated gate field effect transistors; interface electron states; III-V semiconductor; InP devices; MESFETs; SiO/sub 2/-InP; enhanced barrier height gate n-channel; frequency dispersive transconductance technique; frequency distribution; insulated gate MISFETs; interface states distribution; plasma enhanced chemical vapor deposition; source-drain access regions; Density measurement; Dispersion; Frequency measurement; Indium phosphide; Interface states; MESFETs; MISFETs; Plasma applications; Plasma chemistry; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235550

Filename

235550