DocumentCode
3306434
Title
Analysis of SiO/sub 2//InP interfaces using gated photoluminescence and Raman spectroscopy
Author
Ochiai, M. ; Iyer, R. ; Bollig, B. ; Lile, D.
Author_Institution
Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA
fYear
1992
fDate
21-24 April 1992
Firstpage
658
Lastpage
660
Abstract
Photoluminescence (PL) and Raman spectroscopy were used to analyze the SiO/sub 2//InP interface. From PL measurements on gated MIS structures, interface state densities as low as 10/sup 1O//cm/sup 2/-eV have been calculated. This method is more sensitive than conventional high-frequency CV analysis and is less dependent on leakage currents than the quasi-static method.<>
Keywords
III-V semiconductors; Raman spectra of inorganic solids; indium compounds; interface electron states; luminescence of inorganic solids; metal-insulator-semiconductor structures; photoluminescence; semiconductor-insulator boundaries; silicon compounds; III-V semiconductor; Raman spectroscopy; SiO/sub 2/-InP interfaces; gated MIS structures; gated photoluminescence; interface state densities; Capacitance; Dielectric measurements; Electrons; Indium phosphide; Interface states; Photoluminescence; Plasma temperature; Raman scattering; Spectroscopy; Surface cleaning;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location
Newport, RI, USA
Print_ISBN
0-7803-0522-1
Type
conf
DOI
10.1109/ICIPRM.1992.235551
Filename
235551
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