Title :
OMCVD growth of strained Al/sub x/Ga/sub y/In/sub 1-x-y/As for low threshold 1.3 mu m and 1.55 mu m quantum well lasers
Author :
Bhat, R. ; Zah, C.E. ; Koza, M.A. ; Hwang, D.-M.D. ; Favire, F.J. ; Pathak, B.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
It is shown that low threshold current density compressive and tensile strained lasers with AlGaInAs QWs (quantum wells) can be fabricated with easily controllable QW thicknesses in the range of 7-15 nm. It is also shown that it is possible to adjust the emission wavelength from 1.32 to 1.62 mu m while maintaining the QW thickness and strain. The presence of Al in the QWs does not degrade the laser performance, with a threshold current density as low as 96 A/cm/sup 2/ being obtained for compressively strained 1.32- mu m lasers. Tensile strained 1.36- mu m lasers with a threshold current density as low as 256 A/cm/sup 2/ were achieved for the first time.<>
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; laser transitions; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 1.3 micron; 1.32 to 1.62 micron; 1.55 micron; 7 to 15 nm; AlGaInAs; OMCVD growth; QW thickness; compressive strained lasers; current density; emission wavelength; laser performance; low threshold; tensile strained lasers; Artificial intelligence; Capacitive sensors; Fiber lasers; Indium gallium arsenide; Laser theory; Optical arrays; Optical sensors; Power lasers; Quantum well lasers; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235566
