DocumentCode :
3306877
Title :
Dry etching process in Gunn diode technology
Author :
Proust, N. ; Collot, P. ; di Forte-Poisson, M.A. ; Brylinski, C. ; Campoli, B.
Author_Institution :
Thomson-CSF, Orsay, France
fYear :
1992
fDate :
21-24 April 1992
Firstpage :
431
Lastpage :
433
Abstract :
Recent advances in 94-GHz Gunn diode technology are reported. Reactive ion etching (RIE) has been used for mesa processing instead of FeCl/sub 3/ photochemical InP etching. I(V) measurements performed on diodes of 50- mu m diameter in both cases are similar. The on-wafer saturation current homogeneity is enhanced when RIE is performed. A smaller dispersion (3% compared to 7-15%) on the saturation current is obtained when RIE is used. CW (continuous wave) microwave power performances are quite identical. 62-mW diodes oscillate at 94 GHz with 1.9% efficiency.<>
Keywords :
Gunn diodes; III-V semiconductors; indium compounds; sputter etching; 1.9 percent; 50 micron; 62 mW; 94 GHz; CW microwave power performance; Gunn diode technology; I-V measurements; InP; dry etching process; mesa processing; on-wafer saturation current homogeneity; reactive ion etching; saturation current; Diodes; Dry etching; Gold; Gunn devices; Hydrogen; Indium phosphide; Millimeter wave technology; Ohmic contacts; Performance evaluation; Photochemistry;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
Type :
conf
DOI :
10.1109/ICIPRM.1992.235572
Filename :
235572
Link To Document :
بازگشت