Analysis of InP/InGaAs single and double heterostructure bipolar transistors for simultaneous high speed and high breakdown operation

Author

Chau, H.-F. ; Pavlidis, D. ; Hu, J. ; Tomizawa, K.

Author_Institution

Michigan Univ., Ann Arbor, MI, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

410

Lastpage

413

Abstract

The authors present InP/InGaAs HBT (heterojunction bipolar transistor) characteristics with different collector materials and doping profiles in view of high breakdown operation and possibly high speed characteristics. The breakdown and speed characteristics of InP/InGaAs HBTs were analyzed by drift-diffusion and Monte Carlo modeling, respectively. Important criteria for the speed-power tradeoffs were established and very satisfactory performance was found in graded double HBTs.<>

Keywords

III-V semiconductors; Monte Carlo methods; doping profiles; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; HBT; InP-InGaAs; Monte Carlo modeling; collector materials; doping profiles; double heterostructure bipolar transistors; drift diffusion modeling; high breakdown operation; high speed characteristics; single heterostructure bipolar transistors; Bipolar transistors; Breakdown voltage; Electric breakdown; Gallium arsenide; Heterojunction bipolar transistors; Impact ionization; Indium gallium arsenide; Indium phosphide; Performance analysis; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235577

Filename

235577