Millimeter and Submillimeter Semiconductor Hot Electron Bolometer

Author

Dobrovolsky, V.N. ; Sizov, F.F. ; Kamenev, Yu.E. ; Gumenjuk-Sichevska, J.V. ; Smirnov, A.B.

Author_Institution

V. Lashkaryov Inst. of Semicond. Phys., Nat. Acad. of Sci. of Ukraine, Kiev

Volume

1

fYear

2007

fDate

25-30 June 2007

Firstpage

198

Lastpage

200

Abstract

In this work Hg_1-xCd_xTe based THz semiconductor hot electron bolometer (SHEB) with the direct detection for millimeter and submillimeter region is considered. In the proposed device the electromagnetic radiation heats only electrons in a narrow gap semiconductor without its lattice inertial heating. It is shown that using this narrow-gap semiconductor diode instead of a photoconductor as a THz detector seems promising because of smaller currents and larger resistances of p-n junctions.

Keywords

II-VI semiconductors; bolometers; cadmium compounds; hot carriers; mercury compounds; millimetre wave detectors; millimetre wave diodes; narrow band gap semiconductors; p-n junctions; submillimetre wave detectors; submillimetre wave diodes; Hg_1-xCd_xTe; SHEB; THz detector; direct detection; millimeter bolometer; narrow gap semiconductor; p-n junction diode; semiconductor hot electron bolometer; submillimeter bolometer; Bolometers; Electromagnetic heating; Electromagnetic radiation; Electrons; Lattices; Mercury (metals); Millimeter wave devices; Photoconducting devices; Semiconductor diodes; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves and Workshop on Terahertz Technologies, 2007. MSMW '07. The Sixth International Kharkov Symposium on

Conference_Location

Kharkov

Print_ISBN

1-4244-1237-4

Type

conf

DOI

10.1109/MSMW.2007.4294607

Filename

4294607