Signal and noise modeling and analysis of free-running low noise DRO in Ka-band compatible to MMIC technology

Author

Firouzeh, Z.H. ; Abdipour, A. ; Mohammadi, A.

Author_Institution

Electr. Eng. Dept., Amirkabir Univ. of Technol., Tehran, Iran

fYear

2002

fDate

17-19 Aug. 2002

Firstpage

848

Lastpage

851

Abstract

A low noise free-running Dielectric Resonator Oscillator based on AlGaAs/GaAs HBT compatible to MMIC (Monolithic Microwave Integrated Circuit) has been designed and simulated. The design uses a HBT with f_T in 71 GHz, and low flicker noise in Ka band. Large signal analysis of the oscillator is based on harmonic balance method, and simultaneous signal and noise method has been applied to calculate output phase noise spectrum. The designed circuit oscillates at 28.225 GHz with output power of 9.29 dBm. The phase noise of stable oscillator has been determined to be -116 dBc/Hz and -127 dBc/Hz at 100 kHz and 1 MHz off carrier, respectively.

Keywords

III-V semiconductors; MMIC oscillators; aluminium compounds; bipolar MMIC; dielectric resonator oscillators; flicker noise; gallium arsenide; heterojunction bipolar transistors; integrated circuit modelling; integrated circuit noise; phase noise; 28.225 GHz; AlGaAs-GaAs; AlGaAs/GaAs HBT; Ka-band; MMIC technology; flicker noise; harmonic balance method; large-signal analysis; low-noise free-running dielectric resonator oscillator; noise model; phase noise; signal model; 1f noise; Dielectrics; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit noise; Integrated circuit technology; MMICs; Microwave oscillators; Phase noise; Signal analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on

Print_ISBN

0-7803-7486-X

Type

conf

DOI

10.1109/ICMMT.2002.1187834

Filename

1187834