In-plane quantum energy control of InGaAs/InGaAsP MQW structure by MOCVD selective area growth

Author

Takahashi, M. ; Suzuki, M. ; Aoki, M. ; Uomi, K. ; Kawano, T.

Author_Institution

Hitachi Ltd., Tokyo, Japan

fYear

1992

fDate

21-24 April 1992

Firstpage

206

Lastpage

209

Abstract

The controllability of in-plane Eg (in-plane bandgap energy) is investigated focusing on the mechanism of quantum energy variation for InGaAs/InGaAsP MQW (multiquantum well) structures. SAG (selective area growth) is applied to an MQW electroabsorption-modulator/distributed feedback-laser integrated light source. Eg was successfully controlled in InGaAs/InGaAsP MQW structures by simultaneous MOCVD (metal-organic chemical vapor deposition) SAG. The large photoluminescence peak wavelength variation from 1.42 to 1.58 mu m was found to result mainly from the thickness enhancement of the quantum well layer. Superior properties of the device indicate that the SAG technique is promising for photonic device integration.<>

Keywords

III-V semiconductors; distributed feedback lasers; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; luminescence of inorganic solids; optical modulation; photoluminescence; semiconductor growth; semiconductor lasers; semiconductor quantum wells; vapour phase epitaxial growth; 1.42 to 1.58 micron; InGaAs-InGaAsP; MOCVD selective area growth; electroabsorption-modulator/distributed feedback-laser integrated light source; in plane quantum energy control; in-plane bandgap energy; metal-organic chemical vapor deposition; multiquantum well structures; photoluminescence peak wavelength; photonic device integration; quantum well layer; Centralized control; Indium gallium arsenide; Indium phosphide; Laboratories; Laser excitation; MOCVD; Optical control; Photonic band gap; Quantum well devices; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235603

Filename

235603