• DocumentCode
    330754
  • Title

    Wire-Like Doping Of Si Atoms At Multiatomic Steps On GaAs[001] Vicinal Surfaces By Metalorganic Vapor Phase Epitaxial Growth

  • Author

    Irisawa, Tomoki ; Motohisa, Junichi ; Akabori, Masashi ; Fukui, Takashi

  • Author_Institution
    Hokkaido University
  • fYear
    1998
  • fDate
    13-16 July 1998
  • Firstpage
    301
  • Lastpage
    302
  • Keywords
    Annealing; Atomic layer deposition; Doping; Epitaxial growth; Epitaxial layers; Fabrication; Gallium arsenide; Nanoscale devices; Semiconductor impurities; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 1998 International
  • Conference_Location
    Kyoungju, South Korea
  • Print_ISBN
    4-930813-83-2
  • Type

    conf

  • DOI
    10.1109/IMNC.1998.730092
  • Filename
    730092
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=330754