Enhanced modulation bandwidth of strained MQW lasers

Author

Morton, P.A. ; Temkin, H. ; Coblentz, D.L. ; Tanbun-Ek, T. ; Logan, R.A. ; Sciortino, P.F., Jr. ; Sergent, A.M.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

614

Lastpage

617

Abstract

The authors compare the dynamic properties of bulk, lattice-matched, and strained multiple-quantum-well (MQW) 1.3- mu m Fabry-Perot lasers up to high bias levels. They show that long-wavelength strained MQW lasers can have a higher intrinsic bandwidth than bulk active and lattice matched MQW lasers, and that a -3-dB bandwidth of over 30 GHz can be expected from devices with a thin separate confinement heterostructure if a low parasitic device structure is used. It is found that the K factor used to determine maximum bandwidth in bulk active laser diodes is unsuitable for strained MQW devices, where a linear relationship of damping/(resonance frequency) is not observed at high power levels.<>

Keywords

laser beams; optical modulation; semiconductor lasers; 1.3 micron; 30 GHz; Fabry-Perot lasers; K factor; bandwidth; damping; dynamic properties; enhanced modulation bandwidth; high bias levels; lattice-matched; long-wavelength; low parasitic device structure; resonance frequency; strained MQW lasers; strained multiple-quantum-well; thin separate confinement heterostructure; Bandwidth; Capacitive sensors; Damping; Diode lasers; Frequency response; Lattices; Masers; Quantum well devices; Resonance; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235612

Filename

235612