Title :
Electron-Beam Doping In Damageless Regions Of Semiconductors By The Kick-Out Mechanism (Intersticialcy Mechanism)
Author :
Wada, T. ; Fujimoto, H. ; Tomita, Y.
Author_Institution :
Daido Institute of Technology
Keywords :
Atomic beams; Atomic layer deposition; Atomic measurements; Electrons; Gallium arsenide; Germanium; Samarium; Semiconductor device doping; Silicon; Temperature;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1998 International
Conference_Location :
Kyoungju, South Korea
Print_ISBN :
4-930813-83-2
DOI :
10.1109/IMNC.1998.730095
