DocumentCode
330760
Title
A Nano-Structure Memory With SOI Edge Channel And A Nano Dot
Author
Park, Geunsook ; Han, Sangyeon ; Shin, Hyungcheol
Author_Institution
KAIST
fYear
1998
fDate
13-16 July 1998
Firstpage
315
Lastpage
316
Keywords
Electric variables; Electrons; Etching; Fabrication; Lithography; Nanoscale devices; Nonvolatile memory; Silicon; Threshold voltage; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 1998 International
Conference_Location
Kyoungju, South Korea
Print_ISBN
4-930813-83-2
Type
conf
DOI
10.1109/IMNC.1998.730099
Filename
730099
Link To Document