Direct Lithography On Hydrogen-Terminated Silicon Surface Using Two-Dimensional Hydrogen Analysis

Author

Ishikawa, K. ; Yoshimura, M. ; Ueda, K.

Author_Institution

Toyota Technological Institute

fYear

1998

fDate

13-16 July 1998

Firstpage

329

Lastpage

330

Keywords

Atomic layer deposition; Electron beams; Electrostatic discharge; Hafnium; Hydrogen; Lithography; Silicon; Solids; Spectroscopy; Surface cleaning;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 1998 International

Conference_Location

Kyoungju, South Korea

Print_ISBN

4-930813-83-2

Type

DOI

10.1109/IMNC.1998.730106

Filename

730106

Link To Document