Title :
Ultrahigh Al Schottky barrier to p-Si
Author :
Horváth, Zs J. ; Ádám, M. ; Van Tuyen, Vo ; Dücsö, Cs
Author_Institution :
Res. Inst. for Tech. Phys., Hungarian Acad. of Sci., Budapest, Hungary
Abstract :
The possibility of barrier height enhancement of Schottky junction on p-type Si was studied by using a chemical passivation procedure. Schottky barrier heights up to 0.91 eV have been obtained, due probably to the unpinning of the Fermi-level at the Al/Si interface. It is probably the highest barrier height value published so far for a solid-state Schottky junction prepared on p-Si
Keywords :
Fermi level; Schottky barriers; aluminium; elemental semiconductors; passivation; semiconductor-metal boundaries; silicon; Al-Si; Al/p-Si interface; Fermi level unpinning; Schottky barrier height; chemical passivation; solid-state Schottky junction; Artificial intelligence; Capacitance-voltage characteristics; Chemicals; Etching; Hafnium; Metallization; Plasma applications; Plasma measurements; Plasma temperature; Schottky barriers;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on
Conference_Location :
Smolenice Castle
Print_ISBN :
0-7803-4909-1
DOI :
10.1109/ASDAM.1998.730172
