A contribution to electrochemical C-V measurements on GaAs/GaAlAs multilayer structures

Author

Kinder, R. ; Nemcsics, Å ; Harman, R. ; Riesz, F. ; Pécz, B.

Author_Institution

Fac. of Electr. Eng. & Inf., Slovak Univ. of Technol., Bratislava, Slovakia

fYear

1998

fDate

5-7 Oct 1998

Firstpage

215

Lastpage

218

Abstract

GaAs/GaAlAs multilayer structures are investigated by ECV technique on this paper. Two different MBE sample were used for investigation. The sample have a GaAs/GaAlAs junction. One sample is a HBT structure, the other one is a p-i-n photodiode structure. The multilayer structures were tested with different aqueous electrolytes and the ECV results were controlled by SR and TEM measurement, too

Keywords

III-V semiconductors; aluminium compounds; capacitance; gallium arsenide; heterojunction bipolar transistors; p-i-n photodiodes; semiconductor device measurement; semiconductor junctions; semiconductor-electrolyte boundaries; GaAs-GaAlAs; GaAs/GaAlAs multilayer structure; HBT; MBE; aqueous electrolyte; carrier concentration profile; electrochemical capacitance-voltage measurement; p-i-n photodiode; Capacitance-voltage characteristics; Current measurement; Electrical resistance measurement; Electrodes; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Nonhomogeneous media; Strontium; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 1998. ASDAM '98. Second International Conference on

Conference_Location

Smolenice Castle

Print_ISBN

0-7803-4909-1

Type

conf

DOI

10.1109/ASDAM.1998.730202

Filename

730202