Title :
A destruction-free parameter extraction scheme for GTO models
Author :
Göhler, L. ; Langer, T. ; Sigg, J.
Author_Institution :
Univ. der Bundeswehr Munchen, Neubiberg, Germany
Abstract :
This paper presents a physically based parameter extraction scheme for GTO models. The methods are discussed and demonstrated with an example. The comparison between simulated and measured device behaviour shows good agreement.
Keywords :
parameter estimation; semiconductor device models; thyristors; GTO models; destruction-free parameter extraction; measured device behaviour; simulated device behaviour; Capacitance measurement; Charge carrier lifetime; Curve fitting; Data mining; Doping profiles; Equations; Manufacturing; Paper technology; Parameter extraction; Semiconductor process modeling;
Conference_Titel :
Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE
Conference_Location :
St. Louis, MO, USA
Print_ISBN :
0-7803-4943-1
DOI :
10.1109/IAS.1998.730267
