DocumentCode
3307946
Title
Characterization of MOVPE grown GaInP as wide band gap Schottky barrier layer
Author
Scheffer, F. ; Buchali, F. ; Lindner, A. ; Liu, Q. ; Wiersch, A. ; Kohl, A. ; Prost, W.
Author_Institution
Dept. of Solid State Electron., Duisburg Univ., Germany
fYear
1992
fDate
21-24 April 1992
Firstpage
538
Lastpage
541
Abstract
GaInP as an Al-free wideband gap material has been grown lattice-matched on GaAs by LP-MOVPE (low-pressure metal-organic vapor-phase epitaxy). A detailed CV analysis has been carried out to evaluate the metallization barrier ( Phi /sub B/=1 eV), the residual background concentration (N/sub D/>
Keywords
III-V semiconductors; Schottky effect; deep levels; gallium compounds; indium compounds; semiconductor growth; vapour phase epitaxial growth; GaInP; Schottky contacts; deep impurity behavior; growth parameters; low pressure MOVPE; metallization barrier; ohmic contacts; residual background concentration; semiconductor; wide band gap Schottky barrier layer; Epitaxial growth; Epitaxial layers; Gallium arsenide; Gold; Impurities; Ohmic contacts; Photonic band gap; Schottky barriers; Temperature; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location
Newport, RI, USA
Print_ISBN
0-7803-0522-1
Type
conf
DOI
10.1109/ICIPRM.1992.235632
Filename
235632
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