New intelligent power multi-chips modules with junction temperature detecting function

Author

Kajiwara, Tamao ; Yamagaguchi, A. ; Hoshi, Yasuyuki ; Sakurai, Kenya ; Gallagher, Jerry

Author_Institution

Matsumoto Factory, Fuji Electr. Co. Ltd., Nagano, Japan

Volume

2

fYear

1998

fDate

12-15 Oct. 1998

Firstpage

1085

Abstract

A new IGBT-IPM named R-IPM has been developed. This R-IPM consists of only silicon semiconductors chips, so called IPMCMs (intelligent power multi-chip modules). The exclusive monolithic IC used in the R-IPM provides over-temperature protection by directly detecting the junction temperature T/sub j/of the IGBT chips. This new T/sub j/ detection is the first of its kind. This paper describes the R-IPM and its T/sub j/ detecting technology.

Keywords

insulated gate bipolar transistors; integrated circuit measurement; monolithic integrated circuits; multichip modules; p-n junctions; power integrated circuits; temperature measurement; IGBT; R-IPM; intelligent power multi-chips modules; junction temperature detection; monolithic IC; over-temperature protection; radiated noise reduction; silicon semiconductors chips; Design optimization; Insulated gate bipolar transistors; Integrated circuit layout; Integrated circuit noise; Integrated circuit technology; Monolithic integrated circuits; Motor drives; Noise reduction; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE

Conference_Location

St. Louis, MO, USA

ISSN

0197-2618

Print_ISBN

0-7803-4943-1

Type

conf

DOI

10.1109/IAS.1998.730282

Filename

730282