• DocumentCode
    330804
  • Title

    Characterization of capacitors for power circuit decoupling applications

  • Author

    Venkataramanan, Giri

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Montana State Univ., Bozeman, MT, USA
  • Volume
    2
  • fYear
    1998
  • fDate
    12-15 Oct. 1998
  • Firstpage
    1142
  • Abstract
    Increase in switching speeds of power semiconductors have resulted in the need for decoupling capacitors to be placed across the DC bus, intimate to the semiconductor module in power converter circuits. These capacitors prevent overvoltages across the power semiconductor devices during switching transients. Moreover, they also reduce the high frequency content of the current flowing through the power circuit interconnection, thereby reducing electromagnetic interference. Various types of capacitors typically used for these applications include: metallized polypropylene film; foil and metallized polypropylene film; multilayer film; multilayer ceramic; and metallized polycarbonate. The parasitic properties of these capacitors including their ESR and ESL play an important role in proper application. The objective of this paper is to present a detailed characterization of the application and comparison of the various capacitors for DC bus decoupling. Characterization methodology, simulation results and design guidelines are presented in the paper.
  • Keywords
    ceramic capacitors; insulated gate bipolar transistors; overvoltage protection; power bipolar transistors; power capacitors; power convertors; power semiconductor switches; switching transients; DC bus decoupling; ESL; ESR; applications; characterization methodology; design guidelines; foil capacitors; high-frequency current content; metallized polycarbonate capacitors; metallized polypropylene film capacitors; multilayer ceramic capacitors; multilayer film capacitors; overvoltage protection; parasitic properties; power circuit decoupling capacitor characterisation; power converter circuits; power semiconductors; semiconductor module; simulation results; switching speeds; switching transients; Metallization; Nonhomogeneous media; Power capacitors; Power semiconductor devices; Power semiconductor switches; Semiconductor films; Surges; Switched capacitor circuits; Switching circuits; Switching converters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE
  • Conference_Location
    St. Louis, MO, USA
  • ISSN
    0197-2618
  • Print_ISBN
    0-7803-4943-1
  • Type

    conf

  • DOI
    10.1109/IAS.1998.730291
  • Filename
    730291