Near infrared microscopy for the determination of dopant distributions and segregation in n-type/InP

Author

Carlson, D.J. ; Bliss, D.F.

fYear

1992

fDate

21-24 April 1992

Firstpage

515

Lastpage

517

Abstract

The authors present an analytical technique for rapid determination of the free charge carrier density and distribution on both a micro- and macroscale in n-type InP. This technique, based on the near infrared absorption characteristics of free carriers, is applied to the microscale analysis of liquid encapsulated Czochralski (LEC) and liquid encapsulated Kryopoulos (LEK) grown InP crystals as a demonstration of its capabilities. Due to its nondestructive nature, the technique is well suited to substrate qualification inspection before device fabrication and as a tool for crystal growth characterization.<>

Keywords

III-V semiconductors; carrier density; impurity distribution; indium compounds; infrared spectra of inorganic solids; optical microscopy; segregation; Czochralski crystals; InP; Kryopoulos crystals; crystal growth characterization; dopant distributions; dopant segregation; free charge carrier density; infrared microscopy; microscale analysis; n-type; near infrared absorption; semiconductor; substrate qualification inspection; Charge carrier density; Density measurement; Electromagnetic wave absorption; Indium phosphide; Magnetic analysis; Microscopy; Optical materials; Optical sensors; Substrates; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235638

Filename

235638