Effect of growth interruptions at interfaces on the shapes of InGaAs/InP quantum wells grown by gas source MBE

Author

Elman, B. ; Koteles, E.S. ; Kenneson, D. ; Powers, I. ; Oblas, D.

Author_Institution

GTE Lab. Inc., Waltham, MA, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

175

Lastpage

178

Abstract

The authors report on the effects of the duration of growth interruptions (during which group V gases are switched) on the geometrical shapes of strained and lattice matched InGaAs/InP single quantum wells (QWs) grown by gas source molecular beam epitaxy (MBE). QW shape changes were inferred from low-temperature photoluminescence peak energies and Auger depth profiling data. From the data presented it follows that in order to obtain square QWs the interruption times t/sub 1/ (t/sub 2/) have to be chosen such that, for very thin wells, QW transition energies must be minimized (maximized) respectively while the time t/sub 2/ (t/sub 1/) is set at about 20 seconds.<>

Keywords

Auger effect; III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; interface structure; luminescence of inorganic solids; photoluminescence; semiconductor growth; semiconductor quantum wells; Auger depth profiling; GSMBE; InGaAs-InP; InGaAs/InP quantum wells; QW transition energies; gas source MBE; geometrical shapes; growth interruptions; interfaces; lattice matched SQW; low-temperature photoluminescence peak energies; strained SQW; Epitaxial growth; Gases; Indium gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Photoluminescence; Shape; Switches; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235648

Filename

235648