Title :
Growth of InP/GaInAs at reduced temperature using tertiarybutyl sources, with application to InP-based heterostructure bipolar transistors
Author :
McDermott, B.T. ; Burke, W.E. ; Seabury, C.W. ; Ho, W.J.
Author_Institution :
Rockwell Int. Sci. Center, Thousand Oaks, CA, USA
Abstract :
The lower decomposition temperatures of tertiarybutylarsine and tetriarybutylphosphide relative to their hydride alternatives were used to optimally grow high-quality InP and lattice-matched GaInAs at 500 degrees C. Doping with diethylzinc was achieved as high as 2.8*10/sup 19/ cm/sup -3/. The material was demonstrated by fabrication of both single and double heterostructure bipolar transistors that exhibited encouraging device characteristics for low-power applications. This is believed to be the first demonstration of InP-based transistors using all tertiarybutyl Group V sources.<>
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor doping; semiconductor growth; vapour phase epitaxial growth; 500 degC; InP-GaInAs growth; InP-based heterostructure bipolar transistors; MOCVD; decomposition temperatures; diethylzinc doping; double HBT; high-quality InP; lattice-matched GaInAs; low-power applications; reduced temperature; single HBT; tertiarybutyl sources; tertiarybutylarsine; tetriarybutylphosphide; Bipolar transistors; Chemical vapor deposition; Doping; Fabrication; Heterojunction bipolar transistors; Indium phosphide; MOCVD; Safety; Temperature; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235656
