Title :
Enhancement of quality factor in RF-MEMS spiral inductors by etching out substrate
Author :
Long, Haibo ; Zhang, Yaojiang ; Feng, Zhenghe
Author_Institution :
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
Abstract :
It is well known that substrate coupling degrades the Q value of spiral inductors. By partial or whole substrate etching out underneath the inductors, the Q of spiral inductors is improved. This paper extends the partial element equivalent circuit (PEEC) method for fast-accuracy electromagnetic analysis of such substrate coupling in RF-MEMS spiral inductors. By introducing electrical boundary conditions into PEEC, the capacitance matrix is extended to include substrate coupling. With the equivalent of charges in the interface, Green functions in uniform dielectric regions can be used in the calculations. The numerical results show good agreement with published measurement data.
Keywords :
Green´s function methods; Q-factor; capacitance; electromagnetic coupling; equivalent circuits; etching; inductors; interface states; micromechanical devices; microwave devices; numerical analysis; Green functions; PEEC method; RF-MEMS spiral inductors; capacitance matrix extension; electrical boundary conditions; fast-accuracy electromagnetic analysis; interface charges; measurement data; numerical analysis; partial element equivalent circuit method; quality factor enhancement; substrate coupling; substrate etch-out; uniform dielectric regions; Coupling circuits; Degradation; Dielectric substrates; Electromagnetic analysis; Equivalent circuits; Etching; Inductors; Q factor; Radiofrequency microelectromechanical systems; Spirals;
Conference_Titel :
Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on
Print_ISBN :
0-7803-7486-X
DOI :
10.1109/ICMMT.2002.1187915
