Performance study of InGaAs/InAlAs/InP MODFETs on heterostructures grown by OMVPE and MBE

Author

Adesida, I. ; Tong, M. ; Nummila, K. ; Ketterson, A.A. ; Aina, L. ; Mattingly, M.

Author_Institution

Illinois Univ., Urbana, IL, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

357

Lastpage

359

Abstract

The authors have fabricated and characterized MODFETs on OMVPE (organometallic vapor-phase epitaxy)-grown InAlAs/InGaAs/InP heterostructures. Excellent DC and RF characteristics were obtained. Extrinsic DC transconductance as high as 1020 mS/mm and a unity current gain cut-off frequency, f/sub T/, of 114 GHz were obtained for devices with 0.27- mu m gate-length. An effective saturation velocity of 2.0*10/sup 7/ cm/s was obtained for these devices. These results are shown to be comparable to the best results reported in the literature for MODFETs fabricated in MBE (molecular-beam epitaxy)-grown heterostructures.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 114 GHz; DC transconductance; InGaAs-InAlAs-InP; MBE; MODFETs; RF characteristics; effective saturation velocity; gate-length; heterostructures; organometallic vapor-phase epitaxy; unity current gain cut-off frequency; Conducting materials; Electron mobility; Gold; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFET circuits; MODFET integrated circuits; Molecular beam epitaxial growth;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235678

Filename

235678