Electrical and optical properties of oxygen implants disordered InGaAs-InAl(Ga)As MQWs

Summary form only given. Oxygen implants in MBE (molecular-beam epitaxy)-grown multiquantum wells (nominally undoped and voluntarily doped) have been performed at room temperature and at a higher temperature ( approximately 200 degrees C) to minimize defect influence. Additionally, as a means to investigate the electrical properties, similar implants have also been performed in p-(Be) and n-(Si) type bulk epilayers of InAl(Ga)As and InGaAs. Finally, implants of donor sulfur have been considered for comparing interdiffusion efficiencies. It is confirmed that oxygen did not introduce any additional free carriers in the disordered layers. On the other hand, its presence in the previously doped layers always led to a depression in the measured carrier concentrations suggestive of dopant impurity and oxygen interactions. Although oxygen is a nondopant, its efficiency for introducing intermixing is nearly comparable to that achieved with the active dopant sulfur.<>