Title :
In situ observation of interfacial fracture in low-dimensional nanostructures
Author :
Takahashi, Yoshimasa ; Hirakata, Hiroyuki ; Kitamura, Takayuki
Author_Institution :
Dept. of Mech. Eng. & Sci., Kyoto Univ., Japan
Abstract :
In order to quantitatively evaluate the interface strength of low-dimensional nanoscale components, a fracture test has been performed in a TEM (transmission electron microscope) using a special holder equipped with a small loading apparatus. The loading apparatus, which involves a 3D piezoelectric tube and a special load sensor placed behind the loading tip, allows precise control of the loading point and the measurement of infinitesimal fracture load. A low-dimensional nanoscale component with interface edges has been fabricated from a multi-layered material using FIB (focused ion beam). With this testing system, an in situ observation of crack initiation from the interface edge of low-dimensional SiN/Cu lines has been successfully implemented along with a quantitative measurement of the fracture load. Using the information obtained from the fracture test, the stress field around the SiN/Cu interface edge has been analytically evaluated.
Keywords :
copper; cracks; focused ion beam technology; fracture; fracture toughness testing; interface phenomena; nanostructured materials; silicon compounds; SiN-Cu; crack initiation; focused ion beam; fracture test; in situ observation; infinitesimal fracture load; interface edges; interface strength; interfacial fracture; low-dimensional nanostructures; multilayered material; transmission electron microscope; Information analysis; Information technology; Ion beams; Mechanical engineering; Performance evaluation; Radiofrequency identification; Silicon compounds; Stress; System testing; Transmission electron microscopy;
Conference_Titel :
Electronics Materials and Packaging, 2005. EMAP 2005. International Symposium on
Print_ISBN :
1-4244-0107-0
DOI :
10.1109/EMAP.2005.1598235