Modulated impurity-concentration InP-TEDs for second-harmonic oscillators at 260 GHz

InP transferred electron devices of various doping profiles have been theoretically investigated for fundamental- and harmonic-mode operation at frequencies up to 260 GHz. The results are based on an efficient and accurate hydrodynamic simulator which analyzes the device under impressed terminal voltage conditions and in practical oscillator circuits. In comparison with state-of-the-art graded profile diodes, improved performance is demonstrated for modulated impurity-concentration devices for both modes of operation. Especially for power generation above 200 GHz, the proposed modulated impurity concentration diodes are expected to be advantageous in comparison with IMPATT diodes