• DocumentCode
    330989
  • Title

    A new device for smart power integrated circuits - the trench lateral DMOSFET

  • Author

    Zitouni, M. ; Morancho, F. ; Tranduc, H. ; Rossel, P. ; Buxo, J. ; Pages, I.

  • Author_Institution
    CNRS, Toulouse, France
  • Volume
    1
  • fYear
    1998
  • fDate
    6-10 Oct 1998
  • Firstpage
    137
  • Abstract
    In this paper, a new concept of lateral DMOSFET for medium voltage (<100 Volts) Smart Power Integrated Circuits is proposed. This structure called LUDMOSFET features a reduced specific on-resistance and enhanced breakdown voltage. For example, for a breakdown voltage of 50 V, the specific on-resistance is 1.2 mΩ.cm2 in the conventional LDMOSFET, 0.8 mΩ.cm2 in the LUDMOS without polysilicon (i.e. 30 percent reduction) and 0.6 mΩ.cm2 in the LUDMOS with polysilicon (i.e. 50 percent reduction)
  • Keywords
    power MOSFET; power integrated circuits; semiconductor device breakdown; 50 V; LUDMOSFET; Si; breakdown voltage; polysilicon; smart power integrated circuit; specific on-resistance; trench lateral DMOSFET; Bipolar transistors; Breakdown voltage; Doping; Electric breakdown; Electric resistance; Electrodes; Immune system; MOSFETs; Medium voltage; Power integrated circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-4432-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1998.732307
  • Filename
    732307
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=330989