Study of Ni-based ohmic contacts fabricated on n-6H-SiC polar faces

Author

Rastegaeva, M.G. ; Andreev, A.N. ; Bobanin, A.I. ; Mokhov, E.N. ; Sanki, V.I.

Author_Institution

A.F. Ioffe Phys.-Tech. Inst., Acad. of Sci., St. Petersburg, Russia

Volume

1

fYear

1998

fDate

6-10 Oct 1998

Firstpage

327

Abstract

Electrical characteristics and composition of interface region were studied for Ni-based ohmic contacts prepared on the n-6H-SiC polar faces at the various annealing temperatures. Specific contact resistance as well as composition of interface region depends strongly on annealing temperature and surface orientation. The data are reported on dependence of specific contact resistance on uncompensated impurity concentration. Fabricated ohmic contacts show stable electrical characteristics at the environment temperatures up to 550°C and current densities up to 10 ⁴ A/cm²

Keywords

annealing; contact resistance; nickel; ohmic contacts; polar semiconductors; silicon compounds; 550 C; Ni ohmic contact; SiC-Ni; annealing; electrical characteristics; impurity concentration; interfacial composition; n-6H-SiC polar face; specific contact resistance; surface orientation; Annealing; Charge carriers; Coatings; Contact resistance; Lattices; Ohmic contacts; Oxidation; Silicon carbide; Space charge; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International

Conference_Location

Sinaia

Print_ISBN

0-7803-4432-4

Type

conf

DOI

10.1109/SMICND.1998.732394

Filename

732394