50 Gbit/s InP-based photoreceiver OEIC with gain flattened transfer characteristics

Author

Bach, H.-G. ; Schlaak, W. ; Mekonnen, G.G. ; Steingruber, R. ; Seeger, A. ; Engel, Th. ; Passenberg, W. ; Umbach, A. ; Schramm, C. ; Unterborsch, G.

Author_Institution

Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany

Volume

1

fYear

1998

fDate

20-24 Sep 1998

Firstpage

55

Abstract

An InP-based photoreceiver OEIC for ⩾40 Gbit/s data rate applications is presented. Besides a waveguide-integrated photodiode it contains a 38 GHz gain flattened distributed amplifier, which is composed of four HEMTs, fabricated by e-beam lithography

Keywords

HEMT integrated circuits; III-V semiconductors; electron beam lithography; indium compounds; integrated circuit technology; integrated optoelectronics; optical fabrication; optical receivers; photodiodes; 50 Gbit/s; Gbit/s InP-based photoreceiver OEIC; HEMT IC; HEMTs; InP; InP-based photoreceiver OEIC; bit/s data rate applications; e-beam lithography; gain flattened distributed amplifier; gain flattened transfer characteristics; waveguide-integrated photodiode; Bandwidth; Circuits; Distributed amplifiers; HEMTs; MODFETs; Optical amplifiers; Optical receivers; Optical waveguides; Optoelectronic devices; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communication, 1998. 24th European Conference on

Conference_Location

Madrid

Print_ISBN

84-89900-14-0

Type

conf

DOI

10.1109/ECOC.1998.732433

Filename

732433