Title :
Anomalous temperature behavior in LDMOS current sensing
Author :
Lin, J. ; Pendharkar, S. ; Hower, P. ; Arch, J. ; Chatterjee, T. ; Chen, K. ; Devore, J. ; Hu, B. ; Trogolo, J. ; Wang, Q.
Author_Institution :
Texas Instrum. Inc., Manchester
Abstract :
A peculiar temperature mismatch between a power LDMOS and its sense FET develops over time resulting in yield losses. The anomaly is traced to trapped charge in the power LDMOS that arises from a seemingly unrelated change in the hydrogen anneal temperature in the back end. The physical mechanism leading to the anomaly and the interaction between temperature mismatch and metal layout are presented.
Keywords :
electric current measurement; electric sensing devices; power MOSFET; FET; LDMOS current sensing; anomalous temperature behavior; hydrogen anneal temperature; metal layout; temperature mismatch; Annealing; Circuit synthesis; FETs; Hydrogen; Instruments; Intelligent sensors; Power integrated circuits; Power semiconductor devices; Temperature distribution; Temperature sensors;
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
DOI :
10.1109/ISPSD.2007.4294933
