Title :
Engineering RESURF LDMOSFETs for Robust SOA, ESD Protection and Energy Capability
Author :
Zhu, R. ; Khemka, V. ; Bose, A.
Author_Institution :
Freescale Semicond., Tempe
Abstract :
Power device safe operating area (SOA), ESD immunity and energy capability are of particular importance for smart power IC technologies used in harsh applications. This paper discusses some of the powerful drain and body engineering techniques used in Freescale´s advanced smart power technology to provide robust device characteristics.
Keywords :
electrostatic discharge; power MOSFET; power integrated circuits; ESD protection; RESURF LDMOSFET; body engineering technique; energy capability; powerful drain technique; safe operating area; smart power IC technologies; Buck converters; Current density; Electrostatic discharge; Power engineering and energy; Power integrated circuits; Power semiconductor devices; Protection; Robustness; Semiconductor optical amplifiers; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 2007. ISPSD '07. 19th International Symposium on
Conference_Location :
Jeju Island
Print_ISBN :
1-4244-1095-9
Electronic_ISBN :
1-4244-1096-7
DOI :
10.1109/ISPSD.2007.4294963
