CCD matched filter in spread spectrum communication

Author

Nishimori, Eiji ; Kimura, Chikao ; Nakagawa, Atsushi ; Tsubouchi, Kazuo

Author_Institution

New Japan Radio Co. Ltd., Saitama, Japan

Volume

1

fYear

1998

fDate

8-11 Sep 1998

Firstpage

396

Abstract

We study the feasibility of a charge coupled device (CCD) matched filter based on AlGaAs/GaAs high electron mobility transistor (HEMT) technology in a spread spectrum (SS) communication system. We show that the CCD matched filter can work in the IF stage including the carrier, and the power consumption is estimated to be approximately 40 mW in case of an 11-chip Barker code at a chip rate of 11 Mcps. This CCD matched filter is suitable for applications where the PN code is short and fixed, for example, in the IEEE 802.11 standard

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; charge-coupled device circuits; digital filters; field effect digital integrated circuits; gallium arsenide; matched filters; pseudonoise codes; spread spectrum communication; AlGaAs-GaAs; AlGaAs/GaAs HEMT; Barker code; CCD matched filter; HEMT technology; IEEE 802.11 standard; IF stage; PN code; carrier; charge coupled device; chip rate; high electron mobility transistor; modulation doped CCD; power consumption; spread spectrum communication; CMOS technology; Capacitance; Charge coupled devices; Energy consumption; Frequency synchronization; Matched filters; Neodymium; Reactive power; Spread spectrum communication; Surface acoustic waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Personal, Indoor and Mobile Radio Communications, 1998. The Ninth IEEE International Symposium on

Conference_Location

Boston, MA

Print_ISBN

0-7803-4872-9

Type

conf

DOI

10.1109/PIMRC.1998.733587

Filename

733587