DocumentCode :
3316023
Title :
New topography expression model and 3D topography simulation of Al sputter deposition, etching, and photolithography
Author :
Fujinaga, M. ; Kunikiyo, T. ; Uchida, T. ; Kotani, N. ; Osaki, A. ; Akasaka, Y.
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
fYear :
1990
fDate :
9-12 Dec. 1990
Firstpage :
905
Lastpage :
908
Abstract :
It is shown that the material surface can be described by the constant concentration area (the contour surface), by using the continuity principle at the material surface and considering the essential property of the material surface. Based on this model and the conservation of mass, the authors present a simulation algorithm and develop a 3D topography simulator (3D MULSS: Three-Dimensional Multi Layer Shape Simulator). It is demonstrated that this simulator can simulate the coverage of Al sputter deposition accurately, by comparing simulations and experimental results. 3D MULSS can also simulate the sequential processes of deposition, etching, and photolithography in three dimensions. In addition, it is shown that the proposed model can be applied to the surface tension by the 2D simulation of reflow.<>
Keywords :
aluminium; digital simulation; electronic engineering computing; etching; metallisation; photolithography; sputter deposition; surface topography; 2D reflow simulation; 3D MULSS; 3D multilayer shape simulator; 3D topography simulation; Al; constant concentration area; continuity principle; contour surface; etching; material surface; photolithography; simulation algorithm; sputter deposition; surface tension; topography expression model; Lithography; Semiconductor device modeling; Shape; Sputter etching; Sputtering; Surface tension; Surface topography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
ISSN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.1990.237016
Filename :
237016
Link To Document :
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