Title :
Highly linear wide-band differential LNA using active feedback as post distortion
Author :
Amirabadi, Amir ; Zokaei, Abolfazl ; Bagheri, Mohammad ; Alirezazadeh, Fatemeh
Author_Institution :
Dept. of Electr. Eng., Islamic Azad Univ., Tehran, Iran
Abstract :
The paper describes the design of a differential broadband LNA covering the frequency range from 800 MHz to 5 GHz in 65nm CMOS technology. The work proposes a novel linearization technique for high-frequency wide-band applications using an active feedback as post-distortion. The technique is applied to a wide-band differential common gate (CG) LNA employing noise cancellation method. Post-layout simulations exhibit that the proposed technique increases IIP3 and P1dB considerably to +11.9 and +1 dBm, respectively at 1.8 GHz. The LNA achieves voltage gain of 13.7-13.9 dB, noise figure of 3-3.28 dB, and S11 less than -10 dB, while consuming only 16.5 mW. The layout schematic occupies 0.515 × 0.220 mm2 of chip area.
Keywords :
CMOS integrated circuits; UHF amplifiers; differential amplifiers; field effect MMIC; linearisation techniques; low noise amplifiers; microwave amplifiers; wideband amplifiers; CMOS technology; active feedback; broadband LNA; common gate LNA; frequency 800 MHz to 5 GHz; gain 13.7 dB to 13.9 dB; highly linear wideband differential LNA; linearization technique; low noise amplifiers; noise cancellation; noise figure 3 dB to 3.28 dB; post distortion; post-layout simulations; power 16.5 mW; size 65 nm; CMOS integrated circuits; CMOS technology; Distortion; Gain; Impedance matching; Noise; Radio frequency;
Conference_Titel :
Circuits and Systems (ISCAS), 2015 IEEE International Symposium on
Conference_Location :
Lisbon
DOI :
10.1109/ISCAS.2015.7168718