Possible scaling limit of ion-implanted GaAs MESFET for large-scale integrated circuits

Author

Hirose, M. ; Uchitomi, N.

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1990

fDate

9-12 Dec. 1990

Firstpage

511

Lastpage

514

Abstract

The possible scaling limits of ion-implanted GaAs MESFETs have been investigated by means of a numerical model which includes interface states at the Schottky barrier. It was found that the scaling limit depends on the interface state density because the barrier height and the threshold voltage are affected by the interface state density. When an E-type FET in DCFL circuits is scaled-down on the basis of the present 0.5- mu m-gate buried p-layer LDD (lightly doped drain) MESFET, the gate length can be reduced to 0.21 mu m at an interface state density of 6.6*10/sup 12/ cm/sup -2/ eV/sup -1/ where the gate length is a minimum.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; electronic density of states; gallium arsenide; integrated circuit technology; interface electron states; ion implantation; large scale integration; semiconductor device models; 0.21 micron; 0.5 micron; DCFL circuits; E-type FET; GaAs; MESFET; Schottky barrier; barrier height; buried p-layer LDD; gate length; interface state density; interface states; ion-implanted; large-scale integrated circuits; lightly doped drain; numerical model; scaling limit; threshold voltage; FETs; Gallium arsenide; Interface states; Large-scale systems; MESFET circuits; Numerical models; Schottky barriers; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1990.237056

Filename

237056