Title :
AlGaN/GaN based electroabsorption modulator operating at fiber-optics telecommunication wavelengths
Author :
Asgari, Asghar ; Tahmasebizad, N.
Author_Institution :
Res. Inst. for Appl. Phys., Univ. of Tabriz, Tabriz
Abstract :
The intersubband transition in quantum wells was investigated from the viewpoint of application to operate at fiber-optics telecommunication wavelengths at low switching powers. For this purpose, we have simulated an electroabsorption modulator for (lambda =1.55 mum) based on Stark shifting an intersubband resonance in AlN-GaN-AlGaN-AlN step QWs which can operate at fiber-optics telecommunication wavelengths with low applied voltage.
Keywords :
III-V semiconductors; Stark effect; aluminium compounds; electro-optical modulation; electroabsorption; gallium compounds; optical fibre communication; semiconductor quantum wells; wide band gap semiconductors; AlGaN-GaN; Stark shifting; electroabsorption modulator; fiber-optics telecommunication wavelengths; intersubband transition; low switching powers; quantum wells; wavelength 1.55 mum; Absorption; Aluminum gallium nitride; Electron optics; Gallium nitride; Optical fiber communication; Optical modulation; Quantum computing; Resonance; Stationary state; Ultraviolet sources;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on
Conference_Location :
Nottingham
Print_ISBN :
978-1-4244-2307-1
DOI :
10.1109/NUSOD.2008.4668215
