DocumentCode
3317105
Title
DC and RF performance of MBE grown InAlAs/InP MODFETs
Author
Fathimulla, A. ; Hier, H. ; Abrahams, J. ; Hempfling, E.
Author_Institution
Allied-Signal Aerosp. Co., Columbia, MD, USA
fYear
1990
fDate
9-12 Dec. 1990
Firstpage
948
Lastpage
950
Abstract
The authors report the state-of-the-art RF performance of InAlAs/InP MODFETs, grown for the first time via MBE (molecular beam epitaxy). The S-parameters of the FETs were measured from 0.5 to 26.5 GHz for various bias voltages (both V/sub gs/ and V/sub ds/). Maximum stable gains (MSGs) of 13 and 11.5 dB at 18 and 26.5 GHz, respectively, were measured for a source-drain voltage of 7.0 V. Extrapolating MSG at 6 dB/octave, a maximum oscillation frequency of about 75 GHz is predicted.<>
Keywords
III-V semiconductors; S-parameters; aluminium compounds; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; solid-state microwave devices; 0.5 to 26.5 GHz; 75 GHz; DC performance; EHF; HEMT; InAlAs-InP; MBE grown; MODFETs; RF performance; S-parameters; SHF; molecular beam epitaxy; FETs; Frequency measurement; HEMTs; Indium compounds; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Radio frequency; Scattering parameters; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Type
conf
DOI
10.1109/IEDM.1990.237084
Filename
237084
Link To Document