Title :
Self-consistent modeling of edge-emitting GaInP/AlGaInP red lasers
Author :
Tijero, J.M.G. ; Odriozola, H. ; Esquivias, I. ; Mínguez, A. Martín ; Brick, P. ; Reufer, M. ; Sanayeh, M. Bou ; Iglesias, A. Gomez ; Linder, N.
Author_Institution :
ETSI Telecomun., Univ. Politec. de Madrid, Madrid
Abstract :
A self-consistent laser simulator has been set up for the simulation of edge-emitting GaInP/AlGaInP red lasers. The modeling results have been compared with experiments in broad area 635 nm GaInP/AlGaInP laser diodes. The leakage of electrons and its dependence on the temperature and the p-doping level are analyzed.
Keywords :
III-V semiconductors; aluminium compounds; doping profiles; gallium compounds; indium compounds; leakage currents; semiconductor device models; semiconductor doping; semiconductor lasers; GaInP-AlGaInP; edge-emitting red laser diode; electron leakage; laser simulator; p-doping level; self-consistent modeling; Carrier confinement; Charge carrier processes; Diode lasers; Electrons; Laser modes; Poisson equations; Quantum well lasers; Semiconductor lasers; Solid lasers; Temperature dependence;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on
Conference_Location :
Nottingham
Print_ISBN :
978-1-4244-2307-1
DOI :
10.1109/NUSOD.2008.4668248
