• DocumentCode
    3317682
  • Title

    Microstructure sensors

  • Author

    Guckel, H. ; Christenson, T.R. ; Skrobis, K.J. ; Sniegowski, J.J. ; Kang, J.W. ; Choi, B. ; Lovell, E.G.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
  • fYear
    1990
  • fDate
    9-12 Dec. 1990
  • Firstpage
    613
  • Lastpage
    616
  • Abstract
    Surface micromachined polysilicon pressure sensors offer an attractive, cost-effective high-performance technology if material repeatability issues can be solved. The pressure ranges over which these devices are designable have been established and are set by the maximum allowable diaphragm stress and the minimum acceptable output level. The low pressure limitation can be eliminated by improving the transducer sensitivity. The substitution of the resonating force sensor, another polysilicon component, for piezoresistors can accomplish this but complicates processing. This approach is justified for high performance applications. The alternative is found in a differential transducer which is furnished with double-sided over-pressure stops. One of these stops is provided by the silicon substrate, the other by an electroplated air bridge which is formed by X-ray lithography and electroplating in the presence of a sacrificial layer. The end result is a rigid, thick, accurately spaced stop which results in devices which are rugged and can measure differentials in the 1" water range.<>
  • Keywords
    X-ray lithography; elemental semiconductors; micromechanical devices; pressure transducers; semiconductor technology; silicon; X-ray lithography; diaphragm stress; double-sided over-pressure stops; electroplated air bridge; electroplating; material repeatability; microstructure sensors; piezoresistors; polysilicon pressure sensors; resonating force sensor; sacrificial layer; transducer sensitivity; Bridges; Force sensors; Microstructure; Piezoresistive devices; Silicon; Stress; Thickness measurement; Transducers; X-ray lithography;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.1990.237124
  • Filename
    237124