Title :
Intersubband lasing without inversion
Author_Institution :
Mater. & Eng. Res. Inst., Sheffield Hallam Univ., Sheffield
Abstract :
A microscopic mechanism for intersubband lasing without inversion based on valence band transitions in quantum wells is presented and numerical results are given for III-V materials.
Keywords :
III-V semiconductors; laser theory; quantum well lasers; valence bands; III-V material quantum wells; intersubband lasing; microscopic mechanism; valence band transitions; Effective mass; III-V semiconductor materials; Microscopy; Optical scattering; Particle scattering; RNA; Shape; Tellurium; Temperature; Ultraviolet sources;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2008. NUSOD '08. International Conference on
Conference_Location :
Nottingham
Print_ISBN :
978-1-4244-2307-1
DOI :
10.1109/NUSOD.2008.4668271
